IndiumV3, Main, Repository, bibRecord, 011883

A model for diffusion of beryllium in InGaAs/InP heterostructures

Identifieur interne : 011883 ( Main/Repository ); précédent : 011882; suivant : 011884

A model for diffusion of beryllium in InGaAs/InP heterostructures

Auteurs : RBID : Pascal:01-0269302

Descripteurs français

Pascal (Inist)
- Diffusion(transport), Hétérodiffusion, Matériau dopé, Addition béryllium, Condition aux limites, Formation défaut, Interstitiel, Hétérostructure, Matériau semiconducteur, Indium arséniure, Indium phosphure, Gallium arséniure, Composé binaire, Composé ternaire, Etude expérimentale, As Ga In, InGaAs, In P, 6835F, InP.

English descriptors

KwdEn :
- Beryllium additions, Binary compounds, Boundary conditions, Defect formation, Diffusion, Doped materials, Experimental study, Gallium arsenides, Heterostructures, Impurity diffusion, Indium arsenides, Indium phosphides, Interstitials, Semiconductor materials, Ternary compounds.

Abstract

This study reports on Be diffusion from a Be-doped (3 x 10¹⁹ cm^-3) In_0.53Ga_0.47As layer sandwiched between undoped InP layers grown by gas source molecular beam epitaxy. To explain the obtained experimental depth profiles, a kick-out model of substitutional interstitial diffusion mechanism, involving neutral Be interstitials for the InGaAs epilayer and singly positively charged Be interstitials for the InP epilayers, is proposed. Using the boundary conditions at the heterojunctions and taking into account the built-in electric field, Fermi level and bulk self-interstitial generation/annihilation effects, we obtained a good agreement between the simulated and experimental data.

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Pascal:01-0269302

Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Beryllium additions</term>
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<term>Diffusion</term>
<term>Doped materials</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Heterostructures</term>
<term>Impurity diffusion</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Interstitials</term>
<term>Semiconductor materials</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Diffusion(transport)</term>
<term>Hétérodiffusion</term>
<term>Matériau dopé</term>
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<term>Condition aux limites</term>
<term>Formation défaut</term>
<term>Interstitiel</term>
<term>Hétérostructure</term>
<term>Matériau semiconducteur</term>
<term>Indium arséniure</term>
<term>Indium phosphure</term>
<term>Gallium arséniure</term>
<term>Composé binaire</term>
<term>Composé ternaire</term>
<term>Etude expérimentale</term>
<term>As Ga In</term>
<term>InGaAs</term>
<term>In P</term>
<term>6835F</term>
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<front><div type="abstract" xml:lang="en">This study reports on Be diffusion from a Be-doped (3 x 10<sup>19</sup>
 cm<sup>-3</sup>
) In<sub>0.53</sub>
Ga<sub>0.47</sub>
As layer sandwiched between undoped InP layers grown by gas source molecular beam epitaxy. To explain the obtained experimental depth profiles, a kick-out model of substitutional interstitial diffusion mechanism, involving neutral Be interstitials for the InGaAs epilayer and singly positively charged Be interstitials for the InP epilayers, is proposed. Using the boundary conditions at the heterojunctions and taking into account the built-in electric field, Fermi level and bulk self-interstitial generation/annihilation effects, we obtained a good agreement between the simulated and experimental data.</div>
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A model for diffusion of beryllium in InGaAs/InP heterostructures

A model for diffusion of beryllium in InGaAs/InP heterostructures

Descripteurs français

English descriptors

Abstract

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Le document en format XML

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